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Description
Aug 7, 2007 Page 1. Absolute Maximum Ratings. Parameter. Units. ID @ VGS = 10V, TC = 25 C. Continuous Drain Current. 3.5. ID @ VGS = 10V, TC Page 1 of 6. 2N6790 . Available on commercial versions. N-CHANNEL MOSFET. Qualified per MIL-PRF-19500/555. Qualified Levels: JAN, JANTX, and. JANTXV. Jul 8, 2015 2N6790 . JANTXV2N6800U. JAN2N7228U. JANTX2N6766T1. JAN2N6790. 2N6802. JANTX2N7228U. JANTXV2N6766T1. JANTX2N6790. TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE. JAN 2N6790 U. Page 1. SM-8 BIPOLAR TRANSISTOR H-BRIDGE. PRELIMINARY DATA SHEET ISSUE B JULY 1997. FEATURES. *. Compact package. *. Low on state
| Part Number | 2N6790 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Intersil |
| Description | MOSFET N-CH 200V TO-205AF |
| Series | - |
| Packaging | Bulk |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 2.25A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AF Metal Can |
| Image |  |
2N6790
INTELSIL
20000
1.34
Gfook Eletromic Company Limited
2N6790
ITL
1000
2.625
Kang Da Electronics Co.
2N6790
INTERIL
1000
3.91
MY Group (Asia) Limited
2N6790
INERSIL
3080
5.195
ZHW High-tech (HK) Co., Limited
2N6790
INTERSIL/HAR
3006
6.48
FLOWER GROUP(HK)CO.,LTD
