Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC Series: SIPMOS? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 3.1A, 2A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 20米A Gate Charge (Qg) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: PG-DSO-8
Part Number | BSO615C G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Intersil |
Description | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
Series | SIPMOS |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | PG-DSO-8 |
Image |
BSO615C
INTELSIL
1790
0.32
BRTD TECH CO.,LIMITED
BSO615C G
ITL
38870
1.5275
Shenzhen hsw Technology Co., Ltd
BSO615C
INTERIL
16000
2.735
Finestock Electronics HK Limited
BSO615C
INERSIL
1634
3.9425
F-power Electronics Co
BSO615C
INTERSIL/HAR
120000
5.15
Analog Technology Limited