Description
DESCRIPTION. The BUL510 is manufactured using high voltage. Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter. Electronic Transformer Design-in Guidelines. Type. Package. Typical. Application . BUL39D*. BUL38D*. BUL49D*. BUL58D*. BUL59. BUL67. BUL510 . BUL89.
Part Number | BUL510 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Intersil |
Description | TRANS NPN 450V 10A TO-220 |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 450V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.25A, 5A |
Current - Collector Cutoff (Max) | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
Power - Max | 100W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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BUL510
INTELSIL
293
1.66
FantastIC Sourcing
BUL510
ITL
552
2.2325
Xiefeng (HK) INT'L Electronics Limited
BUL510
INTERIL
10
2.805
Cicotex Electronics (HK) Limited
BUL510
INERSIL
18431
3.3775
Yingxinyuan INT'L (Group) Limited
BUL510
INTERSIL/HAR
9614
3.95
ATLANTIC TECHNOLOGY LIMITED