Part Number | HUF76629D3ST |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intersil |
Description | MOSFET N-CH 100V 20A DPAK |
Series | UltraFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1285pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
HUF76629D3ST
INTELSIL
5859
0.12
HK HEQING ELECTRONICS LIMITED
HUF76629D3ST
ITL
18703
0.7375
Chipskey Technology CO.,LTD
HUF76629D3ST
INTERIL
12500
1.355
ShenZhen Yuxin Technology Co.,Ltd
HUF76629D3ST
INERSIL
37638
1.9725
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
HUF76629D3ST
INTERSIL/HAR
9500
2.59
Cicotex Electronics (HK) Limited