Part Number | IRF640NSTRLPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intersil |
Description | MOSFET N-CH 200V 18A D2PAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
Hot Offer
IRF640NSTRLPBF
INTELSIL
6826
0.97
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
ITL
6870
2.095
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
INTERIL
2340
3.22
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
INERSIL
1275
4.345
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
INTERSIL/HAR
3258
5.47
TROXIN INTERNATIONAL LIMITED