Description
Datasheet N-Channel Power MOSFET. 50V, 16A, 47 m . The RFD16N05 and RFD16N05SM N-channel power. MOSFETs are manufactured using the MegaFET process. 2A . 1 F. 1 F. 0.1 F. +. 1 F. 1 F. RFD16N05 . RFD16N05 . RFD16N05 . RFD16N05 . 5.1k. The on resistance thermal resistance product is greater than the constant. (This unit is not suitable!) B. Try the RFD16N05 . This unit is capable of dissipating the
Part Number | RFD16N05 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intersil |
Description | MOSFET N-CH 50V 16A I-PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 72W (Tc) |
Rds On (Max) @ Id, Vgs | 47 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251AA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
RFD16N05
INTELSIL
8749
1.27
HK HEQING ELECTRONICS LIMITED
RFD16N05
ITL
3222
1.8475
Gallop Great Holdings (Hong Kong) Limited
RFD16N05
INTERIL
55200
2.425
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
RFD16N05_NL
INERSIL
47530
3.0025
CIS Ltd (CHECK IC SOLUTION LIMITED)
RFD16N05
INTERSIL/HAR
289701
3.58
Cicotex Electronics (HK) Limited