Part Number | RFD3055LE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intersil |
Description | MOSFET N-CH 60V 11A I-PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 107 mOhm @ 8A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251AA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
RFD3055LE
INTELSIL
2575
0.54
HK HEQING ELECTRONICS LIMITED
RFD3055LE
ITL
1460
1.0875
Gallop Great Holdings (Hong Kong) Limited
RFD3055LE
INTERIL
313739
1.635
Cicotex Electronics (HK) Limited
RFD3055LE
INERSIL
9000
2.1825
SUMMER TECH(HK) LIMITED
RFD3055LE
INTERSIL/HAR
2000
2.73
Nosin (HK) Electronics Co.