Description
RFP30N06LE , RF1S30N06LESM Rev. B1. RFP30N06LE , RF1S30N06LESM. 30A, 60V, ESD Rated, 0.047 Ohm, Logic. Level N-Channel Power MOSFETs. The RFP30N06LE , RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the. MegaFET process. This process, which Page 1. Smaller, faster, cooler. Power MOSFET. Selection Guide 2013. Page 2. 2 . Page 3. 3. Table of contents. Featured Application: Wide SOA .
Part Number | RFP30N06LE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intersil |
Description | MOSFET N-CH 60V 30A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 96W (Tc) |
Rds On (Max) @ Id, Vgs | 47 mOhm @ 30A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
RFP30N06LE
INTELSIL
750
1.22
HK HEQING ELECTRONICS LIMITED
RFP30N06LE
ITL
6938
2.175
Belt (HK) Electronics Co
RFP30N06LE
INTERIL
10065
3.13
F-power Electronics Co
RFP30N06LE
INERSIL
10
4.085
Gallop Great Holdings (Hong Kong) Limited
RFP30N06LE
INTERSIL/HAR
289858
5.04
Cicotex Electronics (HK) Limited