Part Number | STB6N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intersil |
Description | MOSFET N-CH 600V D2PAK |
Series | MDmesh,II Plus |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 232pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
STB6N60M2
INTELSIL
1000
1.03
HK HEQING ELECTRONICS LIMITED
STB6N60M2
ITL
20000
1.615
HK XINYI COMPONENTS ASIA CO., LIMITED
STB6N60M2
INTERIL
74
2.2
Gallop Great Holdings (Hong Kong) Limited
STB6N60M2
INERSIL
19000
2.785
Corich International Ltd.
STB6N60M2
INTERSIL/HAR
20956
3.37
NEW IDEAS INDUSTRIAL CO., LIMITED